Technical Library

Gelest offers precursor materials for metallization applications derived from Group III & IV elements (Si, Al, Ti, Ta, W, In, Sb, Ge) used to create conductive coatings on silicon, germanium, silicon carbide, sapphire, and plastic substrates. These precursors are suitable for various deposition techniques such as ALD, CVD, MOCVD, and PECVD.

Metallization

SKU Image Name
AKT890 TUNGSTEN(V) ETHOXIDE, tech
AKC252.8 COPPER(I)/(II) HEXAFLUORO-2,4-PENTANEDIONATE - VINYLTRIMETHYLSILANE COMPLEX
AKC262 COPPER(II) 2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATE
OMAL005 ALANE-DIMETHYLETHYLAMINE COMPLEX
OMAL008 ALANE-TRIMETHYLAMINE COMPLEX
OMAS080 TRIS(DIMETHYLAMINO)ARSINE
OMRU027 DIETHYLRUTHENOCENE

Silicon sources such as monochlorosilane, dichlorosilane, 1MS, 2MS, 3MS, 4MS and germanium sources such as germane, t-butylgermane, germanium tetrachloride and other analogs are used in production of strained silicon using metal organic vapor phase epitaxy (MOVPE) to improve chip performance and lower energy consumption.

SiGe Precursors

SKU Image Name
GEG5001 GERMANE 99.99+%
GET7550 TETRAMETHYLGERMANE
GED3410 DIETHYLGERMANE
GED3450 DIGERMANE, 60 wt % in hydrogen
GEE4695 ETHYLGERMANE
GET8561 TRIMETHYLGERMYLTRICHLOROSILANE
GEB1969.5 n-BUTYLGERMANE
GEB1970 t-BUTYLGERMANE
GEG5480 GERMANIUM TELLURIDE
GEG5350 GERMANIUM DISELENIDE

Group IV material are used to reduce electromigration and other effects that Cu and Al have on Si and SiO2 insulator properties and adhesion, while reducing metal corrosion. Typical deposition methods include PVD, CVD, and MOCVD.

Cobalt Barrier Layers

SKU Image Name
INCO032 COBALT TRICARBONYL NITROSYL
AKC240 COBALT(III) 2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATE

Tantalum Barrier Layers

SKU Image Name
OMTA082 TRIS(DIETHYLAMINO)(t-BUTYLIMINO) TANTALUM
OMTA075 TANTALUM PENTAKIS(DIMETHYLAMIDE)
INTA070 TANTALUM PENTABROMIDE

Titanium Barrier Layers

SKU Image Name
OMTI083 TITANIUM TETRAKIS(ETHYLMETHYLAMIDE), 99+%

Gelest has developed patented “chloride-free” chemical process technology to commercially produce Group IV materials for use as gate dielectrics and ILD (inter-layer dielectrics). Typical Group IV materials for gate dielectrics are compounds of Hf, Zr, and rare earths such as Ce, La, Pr. Typical ILD precursors are Si based. In addition, Si-based materials will play a critical role in future generations of porous dielectric materials that will require improved adhesion, mechanical and thermal properties. Porous ULK dielectrics will require the use of CAPS.

Hafnium Gate Dielectrics

SKU Image Name
AKH333 HAFNIUM 2-METHOXYMETHYL-2-PROPOXIDE
AKH326 HAFNIUM t-BUTOXIDE
OMHF075 HAFNIUM DIETHYLAMIDE
OMHF080 HAFNIUM DIMETHYLAMIDE
OMHF083 HAFNIUM TETRAKIS(ETHYLMETHYLAMIDE)

Zirconium Gate Dielectrics

SKU Image Name
AKZ946 ZIRCONIUM t-BUTOXIDE
AKZ948 ZIRCONIUM DIISOPROPOXIDE BIS(2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATE), tech
OMZR080 ZIRCONIUM TETRAKIS(DIMETHYLAMIDE)

Thin Film Inter-Layer Dielectrics

SKU Image Name
SIM6515.0 METHYLSILANE
SIT8570.0 TRIMETHYLSILANE
SIT7542.0 1,1,3,3-TETRAMETHYLDISILAZANE
SIT8709.8 1,3,5-TRISILAPENTANE
SIT8185.0 TRIETHOXYSILANE

Pore Sealing & CAPS Inter-Layer Dielectrics

SKU Image Name
SID3605.0 (N,N-DIMETHYLAMINO)TRIMETHYLSILANE
SID4125.0 DIMETHYLETHOXYSILANE

Porous Films & Porogens Inter-Layer Dielectrics

SKU Image Name
SIB1831.0 BIS(TRIMETHOXYSILYLETHYL)BENZENE
SIA0010.0 ACETOXYETHYLDIMETHYLCHLOROSILANE
SIA0030.0 ACETOXYETHYLTRIMETHOXYSILANE, 92%
SIB1817.0 1,2-BIS(TRIETHOXYSILYL)ETHANE
SIB1821.0 BIS(TRIETHOXYSILYL)METHANE

Etch-Stop Layers Dielectrics

SKU Image Name
SID4593.0 1,4-DISILABUTANE
SID4595.0 1,3-DISILAPROPANE
SIM6515.0 METHYLSILANE
SID4230.0 DIMETHYLSILANE
SIT8570.0 TRIMETHYLSILANE
SIT7555.0 TETRAMETHYLSILANE, 99+%

SiO2 Source Dielectrics

SKU Image Name
SIM6560.0 METHYLTRIMETHOXYSILANE
SID2790.0 DI-t-BUTOXYDIACETOXYSILANE, tech
SIP6822.0 PHENYLTRIMETHOXYSILANE
SIT7110.2 TETRAETHOXYSILANE, 99.9+%

Group IV materials can be applied neat or in solution via conventional lithography techniques to form SAMs. SAM is a layer of amphiphilic molecules created by the chemisorption onto a metal oxide, precious metal surface, plastic, or nanoparticle substrates, followed by the 2-dimensional alignment of hydrophobic groups to form a structures single monolayer. The surface can be selectively modified to achieve the desired antisticktion, mechanical, and chemical properties for microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS).

Metal Oxides- MEMS, NEMS, SAMs

SKU Image Name
SIA0200.0 (3-ACRYLOXYPROPYL)TRIMETHOXYSILANE, 96%
SIA0540.0 ALLYLTRIMETHOXYSILANE
SIA0591.0 N-(2-AMINOETHYL)-3-AMINOPROPYLTRIMETHOXYSILANE, tech
SIB0991.0 (5-BICYCLO[2.2.1]HEPT-2-ENYL)TRICHLOROSILANE, tech, endo/exo isomers
SIH5841.0 (HEPTADECAFLUORO-1,1,2,2-TETRAHYDRODECYL)TRICHLOROSILANE
SIM6476.0 3-MERCAPTOPROPYLTRIMETHOXYSILANE
SIM6492.7 3-[METHOXY(POLYETHYLENEOXY)6-9]PROPYLTRIMETHOXYSILANE, tech
SIT8174.0 (TRIDECAFLUORO-1,1,2,2-TETRAHYDROOCTYL)TRICHLOROSILANE
SIT8185.3 TRIETHOXYSILYLBUTYRALDEHYDE, tech

Gold, Silicon, Titanium Surfaces – MEMs, NEMS, SAMs

SKU Image Name
SIT8173.0 (TRIDECAFLUORO-1,1,2,2-TETRAHYDROOCTYL)SILANE
SIO6635.0 n-OCTADECYLSILANE
SID4629.6 DODECYLSILANE

Volatile Carbosilanes and Higher Polysilanes – the preeminent precursors for:

  • Amorphous silicon
  • SiCO:H films for low-k, barrier layers and etch-stop
  • Silicon carbide films and buffer layers
  • ALD promoted patterning and seed layers
  • Carbon-doped (tensile-strained) silicon
  • Silicon carbonitride passivation

Carbosilanes – EPITAXY

SKU Image Name
SIM6515.0 METHYLSILANE
SID4230.0 DIMETHYLSILANE
SID4595.0 1,3-DISILAPROPANE
SID4592.0 1,3-DISILABUTANE
SID4593.0 1,4-DISILABUTANE
SIT8709.3 1,3,5-TRISILACYCLOHEXANE
SIT8709.8 1,3,5-TRISILAPENTANE
SIT8715.9 TRIS(SILYLMETHYL)SILANE

Volatile Higher Silanes

SKU Image Name
SII6463.4 ISOTETRASILANE
SIN6597.07 NEOPENTASILANE
SIT7880.0 n-TETRASILANE
SIT8709.6 TRISILANE