Methylsilane (1MS), dimethylsilane (2MS), trimethylsilane (3MS),tetramethylsilane (4MS) have been used in semiconductor manufacturing as precursors for the Chemical Vapor Deposition (CVD) of various layers, most often low dielectric constant (low-k) films. They also offer excellent barrier properties, typically used for a liner or a cap layer adjacent to other dielectric layers. These low-k layers vary in composition based on co-reactants combined with the methylsilanes and result in silicon carbide (SiC), silicon carbonitride (SiCN), and siliconoxyhydride (SiCO:H); the deposition reaction can typically be performed at relatively low temperature ranges.
- 1MS and 2MS are utilized mostly for low volume deposition of SiC, SiCN, or SiCO:H depending on the conditions and precursors used.
- 3MS has been used for SiC deposition or SiCO:H deposition, again depending on starting chemistries. This is a production-proven precursor, with current high volume application in semiconductor fabrication.
- 4MS is currently used for SiC deposition on several advanced technology platforms and it is reported within several application patents.
Methyl Silanes
| SKU | Image | Name | Synonym | Vapor_Pressure_3mm | Boiling Point (°C / mm Hg) | Melting Point (°C) | Flashpoint (°C) | Molecular Weight | CAS # |
|---|---|---|---|---|---|---|---|---|---|
| SIM6515.0 |
|
METHYLSILANE | 1MS | -- | -57 | -157° | -- | 46.14 | 992-94-9 |
| SID4230.0 |
|
DIMETHYLSILANE | 2MS | -- | -20 | -150° | -- | 60.17 | 1111-74-6 |
| SIT8570.0 |
|
TRIMETHYLSILANE | 3MS | -- | 6.7 | -135.9° | -- | 74.2 | 993-07-7 |
| SIT7555.0 |
|
TETRAMETHYLSILANE, 99+% | 4MS | -- | 26.6-26.7 | -99° | -27 °C | 88.22 | 75-76-3 |
| SIT7541.0 |
|
1,1,2,2-TETRAMETHYLDISILANE | 4M2S | -- | 86-87 | -93° | -26 °C | 118.32 | 814-98-2 |
| SIH6109.0 |
|
HEXAMETHYLDISILANE | 6M2S | -- | 112-113 | 12-14° | -1 °C | 146.38 | 1450-14-2 |
| SIT7308.0 |
|
TETRAKIS(TRIMETHYLSILYL)SILANE | 12M5S | -- | NA | 267° sub.; 319-21° (sealed tube) | -- | 320.85 | 4098-98-0 |