Methylsilane (1MS), dimethylsilane (2MS), trimethylsilane (3MS),tetramethylsilane (4MS) have been used in semiconductor manufacturing as precursors for the Chemical Vapor Deposition (CVD) of various layers, most often low dielectric constant (low-k) films. They also offer excellent barrier properties, typically used for a liner or a cap layer adjacent to other dielectric layers. These low-k layers vary in composition based on co-reactants combined with the methylsilanes and result in silicon carbide (SiC), silicon carbonitride (SiCN), and siliconoxyhydride (SiCO:H); the deposition reaction can typically be performed at relatively low temperature ranges.
- 1MS and 2MS are utilized mostly for low volume deposition of SiC, SiCN, or SiCO:H depending on the conditions and precursors used.
- 3MS has been used for SiC deposition or SiCO:H deposition, again depending on starting chemistries. This is a production-proven precursor, with current high volume application in semiconductor fabrication.
- 4MS is currently used for SiC deposition on several advanced technology platforms and it is reported within several application patents.
|SKU||Image||Name||Synonym||Vapor_Pressure_3mm||Boiling Point (°C / mm Hg)||Melting Point (°C)||Flashpoint (°C)||Molecular Weight||CAS|
|SIT7555.0||TETRAMETHYLSILANE, 99+%||4MS||--||26.6-26.7||-99°||-27 °C||88.22||--|
|SIT7308.0||TETRAKIS(TRIMETHYLSILYL)SILANE||12M5S||--||NA||267° sub.; 319-21° (sealed tube)||--||320.85||--|